advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 20v capable of 2.5v gate drive r ds(on) 23m surface mount package i d 7.3a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice thermal data parameter 200121051 storage temperature range -55 to 150 operating junction temperature range -55 to 150 total power dissipation 2 linear derating factor 0.016 continuous drain current 3 5.8 pulsed drain current 1 30 gate-source voltage 12 continuous drain current 3 7.3 parameter rating drain-source voltage 20 AP9928GEM pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 s1 g1 d1 s2 g2 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.02 - v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =7a - - 23 m v gs =2.5v, i d =5a - - 32 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - - v g fs forward transconductance v ds =5v, i d =7a - 18 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =12v - - 10 ua q g total gate charge 2 i d =7a - 17 27 nc q gs gate-source charge v ds =16v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =10v - 12 - ns t r rise time i d =1a - 17 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 32 - ns t f fall time r d =10 -17 - ns c iss input capacitance v gs =0v - 500 800 pf c oss output capacitance v ds =20v - 260 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf r g gate resistance f=1.0mhz - 2.8 4.2 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =7a, v gs =0v, - 34 - ns q rr reverse recovery charge di/dt=100a/s - 28 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in2 copper pad of fr4 board , t <10sec ; 135 /w when mounted on min. copper pad. AP9928GEM
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature AP9928GEM 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 4.5v 3.5 v 3.0 v 2.5v v g =2.0v 0 10 20 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c v g = 2.0 v 4.5v 3.5 v 3.0 v 2.5v 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g = 4.5v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 15 19 23 27 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform AP9928GEM q v g 4.5v q gs q gd q g charge 0 3 6 9 12 15 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =12v v ds =1 6 v i d =7a 100 1000 10000 1 4 7 10131619 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0 10 20 30 01234 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s 10s dc
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